FUNDAMENTALS OF MODERN VLSI DEVICES
Fundamentals of Modern VLSI Devices - cambridge
Summary Since the publication of the first edition of Fundamentals of Modern VLSI Devices by Cambridge University Press in 1998, we received much praise and many encouraging reviews on the book. It has been adopted as a textbook for first-year graduate courses on microelectronics in many major universities in the United States and worldwide.
Fundamentals of Modern VLSI Devices - SILO
typicalp-n diodes in modern VLSI devices should be treated as shallow-juncnon diodes. There are effective means for reducing the minority-carrier current in a shallow-emitter diode. For instance, a shallow emitter can be contacted using a doped polysilicon layer instead of a metal or metal silicide layer.